Enhanced interfacial electronic transfer of BiVO ₄ coupled with 2D g‐C ₃ N ₄ for visible‐light photocatalytic performance

A BiVO4/2D g-C3N4 direct dual semiconductor photocatalytic system has been fabricated via electrostatic self-assembly method of BiVO4 microparticle and nanosheet. According to experimental measurements first-principle calculations, the formation built-in electric field opposite band bending around interface region in as well intimate contact between 2D will lead high separation efficiency charge carriers. More importantly, intensity bulid-in is greatly enhanced due ultrathin nanosheet structure g-C3N4. As a result, exhibits excellent performance with 93.0% Rhodamine B (RhB) removal after 40 min visible light irradiation, reaction rate about 22.7 10.3 times that g-C3N4, respectively. In addition, also displays degradation tetracycline (TC). It expected this work may provide insights into understanding significant role heterostructure fabricating highly efficient systems.